Epitaxial Si films on Ge(100) grown via H/Cl exchange

S. M. Gates; D. D. Koleske; J. R. Heath; M. Copel

doi:10.1063/1.108895

Epitaxial Si films on Ge(100) grown via H/Cl exchange

S. M. Gates
, D. D. Koleske
, J. R. Heath
, M. Copel

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si₂H₆ and Si₂Cl ₆, maintaining chlorine and hydrogen surface termination. At 465°C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si₂H₆ and 1 Si₂Cl₆ exposure). At 475°C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

Original language	English
Pages (from-to)	510-512
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	5
DOIs	https://doi.org/10.1063/1.108895
State	Published - Feb 1 1993

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title = "Epitaxial Si films on Ge(100) grown via H/Cl exchange",

abstract = "Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl 6, maintaining chlorine and hydrogen surface termination. At 465°C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475°C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.",

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AU - Gates, S. M.

AU - Koleske, D. D.

AU - Heath, J. R.

AU - Copel, M.

PY - 1993/2/1

Y1 - 1993/2/1

N2 - Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl 6, maintaining chlorine and hydrogen surface termination. At 465°C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475°C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

AB - Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl 6, maintaining chlorine and hydrogen surface termination. At 465°C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475°C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

UR - https://www.scopus.com/pages/publications/0027544860

U2 - 10.1063/1.108895

DO - 10.1063/1.108895

M3 - Article

AN - SCOPUS:0027544860

SN - 0003-6951

VL - 62

SP - 510

EP - 512

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Epitaxial Si films on Ge(100) grown via H/Cl exchange

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